p age:p - p 1 plastic - encapsulate m o s f e t s guangdong hottech industrial co,. ltd. fe a tures high dense cell design for extremely low r ds(on) rugged and reliable case material: molded plastic. parameter symbol ratings uni t s drain - s ource v ol t age vds - 20 v gate - source v o l t age vgs 8 v drain c u rrent ( conti n u o us) id - 2.3 a drain c u rrent ( puls e d) 1 idm - 10 a t o t al po w er dissi p ation @ t a = 2 5 o c pd 1 .25 w operati n g jun c tion a n d s tora g e t e mperature ran g e t j, t stg - 55 to +150 c t hermal resis t ance j u nction t o ambient (p c b mounted) 2 r ja 1 0 0 c/w electrical characteristics (ta=25c, unless otherwise noted) parameter symbol t est condition min t yp max unit off characteristics drain - source breakdown v oltage bv dss v gs = 0 v , i d = - 250 a - 20 v zero gate v oltage drain current i dss v ds = - 20 v , v gs = 0v - 1 a gate body leakage current, forward i gssf v gs = 8 v , v ds = 0v 100 na gate body leakage current, reverse i gssr v gs = - 8 v , v ds = 0v - 100 na on characteristics c gate threshold v oltage v gs(th) v gs = v ds , i d = - 250 a - 0.45 v static drain - source on - resistance r ds(on) v gs = - 4.5 v , i d = - 2.8a 80 120 m ? v gs = - 2.5 v , i d = - 2.0a 110 150 m ? forward transconductance g fs v ds = - 5 v , i d = - 2.8a 8 s dynamic characteristics d input capacitance c iss v ds = - 6 v , v gs = 0 v , f = 1.0 mhz 880 pf output capacitance c oss 270 pf reverse t ransfer capacitance c rss 175 pf switching characteristics d t urn - on delay t ime t d(on) v dd = - 6 v , i d = - 1a, v g s = - 4.5 v , r ge n = 6 ? 11 20 ns t urn - on rise t ime t r 5 10 ns t urn - o f f delay t ime t d(off) 32 65 ns t urn - o f f fall t ime t f 23 45 ns p - channel mosfet sot - 23 1.gate 2.source 3.drain s g d SI2301 absolute maximum ratings (ta=25 o c, unless otherwise noted)
t otal gate charge q g v ds = - 6 v , i d = - 2.8a, v gs = - 4.5v 11 14.5 nc gate - source charge q gs 1.5 nc gate - drain charge q gd 2.1 nc drain - source diode characteristics and maximun ratings drain - source diode forward current 3 i s - 0.75 a drain - source diode forward v oltage 4 v sd v gs = 0 v , i s = - 0.75a - 1.2 v 1 .repetitive rating : pulse width limite d by maximum junction temperatu . 2 .surface mounted on fr4 board,t<5 s ec. 3 .pulse test : pulse width < 300s, duty cycle < 2%. 4 .guaranteed by design, not subject to production testing. plastic - encapsulate m o s f e t s -i d , drain current (a) -i d , drain current (a) -v ds , drain-to-source voltage (v) figure 1. output characteristics -v gs , gate-to-source voltage (v) figure 2. transfer characteristics 10 8 6 4 2 0 01 45 3 2 -v gs =2.5v - v g s =2.0v -v g s =1.5v -v gs =4.5,4,3,v 10 8 6 4 2 0 0.0 1.0 2.0 3.0 0.5 1.5 t j =125 c -55 c 2.5 25 c c, capacitance (pf) c iss c oss c rss 1200 1000 800 600 400 200 0 02 4 6 8 10 r ds(on), normalized r ds(on) , on-resistance(ohms) -v ds , drain-to-source voltage (v) figure 3. capacitance t j , junction temperature( c) figure 4. on-resistance variation with temperature 2.2 1.9 1.6 1.3 1.0 0.7 0.4 v gs =-4.5v i d =-2.8a -100 -50 0 50 100 150 200 p age:p - p 2 guangdong hottech industrial co,. ltd. typical characteristics SI2301
p age:p - p plastic - encapsulate m o s f e t s guangdong hottech industrial co,. ltd. v th , normalized gate-source threshold voltage t j , junction temperature( c) figure 5. gate threshold variation with temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 v ds =v gs i d =-250a -50 -25 0 25 50 75 100 125 150 -i s , source-drain current (a) -v sd , body diode forward voltage (v) figure 6. body diode forward voltage variation with source current 10 0 10 1 0.2 0.4 0.6 0.8 10 -1 1.2 1.0 v gs =0 v -v gs , gate to source voltage (v) qg, total gate charge (nc) figure 7. gate charge -v ds , drain-source voltage (v) figure 8. maximum safe operating area -i d , drain current (a) 10 1 10 0 10 -1 10 1 10 0 10 -1 10 -2 10 2 10 2 5 4 3 2 1 0 036912 v ds =-6v i d =-2.8a 1s 100ms 10ms dc 1ms r ds(on) limit single pulse t a =25 c t j =150 c typical characteristics SI2301
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